WaferBOND® HT-10.11 Material

WaferBOND^® HT-10.11 Material

WaferBOND^® HT-10.11 temporary bonding material enables back-end-of-line (BEOL) processing of ultrathin wafers with standard semiconductor equipment.

WaferBOND^® HT-10.11 material is an organic coating developed for temporary wafer bonding solutions for MEMS and 3-D wafer-level packaging applications. WaferBOND^® HT-10.11 material enables effective bonding and support through substrate thinning and backside standard lithographic processing through the utilization of effective bonding and subsequent thermal slide, chemical*, mechanical**, or laser** debonding for thickness < 75 μm. These materials were specifically developed for thin wafer handling (TWH), through-silicon via (TSV) reveal, and redistribution layer (RDL) creation or processes up to 250°C.

*Chemical release debond method requires a perforated carrier wafer or small die size if releasing after dicing

**Mechanical and laser debond methods require a compatible release material

Wax Replacement

WaferBOND^® HT-10.11 material is an organic coating that enable back-end-of-line (BEOL) processing of ultrathin wafers using standard semiconductor equipment. This material is a great option as an alternative solution to typical wax adhesives. WaferBOND^® HT-10.11 material offers significant advantages because it can be applied with a one-coat process, improve throughput, simplify cleaning, and shorten processing time.

Properties	Wax	WaferBOND^® HT-10.11 Material
Thickness Range	~ 10 – 35 µm	20 µm – 130 µm
Coating Throughput	Requires multiple coats	Single-coat process
Bonding Temperature Range	95°C – 110°C	130°C – 180°C
Debonding Temperature Range	95°C – 110°C	150°C – 200°C
Thermal Stability Temperature Range	< 120°C	≤ 250°C

Thermal Slide Debonding
Learn About Wax Replacement

Benefits

Enables ultrathin wafer processing utilizing standard BEOL techniques and tooling
Assists in creation of interconnects (RDL layers) after thinning
Protect devices from chemical degradation and physical breakage
Adhesive materials can be completely removed from device wafer without damage
Can be utilized with various debond methods (chemical release, thermal slide, mechanical, or laser)

With this WaferBOND^® material, you can:

Process ultrathin wafers in temperatures up to 250°C
Protect the wafer edge from chipping
Protect circuitry from harsh chemical etchants
Provide a void-free interface for a smooth surface on the final thinned wafer

WaferBOND^® HT-10.11 Material Spin Speed Curve:
HT-10.11 Spin Speed Curve Graph

WaferBOND^® HT-10.11 Material