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High-k metal gate (HKMG) technology has become one of the front-runners for the next generation of CMOS devices. This new technology incorporates a high-k dielectric, which reduces leakage and improves…
October 15, 2016 Blogs Read MoreFabrication of microelectronic devices increasingly involves the creation of high-aspect-ratio structures (those with large height or depth and narrow width, such as trenches, vias, columns, and mesas). These structures provide…
Read MoreLimitations of Moore's Law Ultimately, performance of computers and other electronic products will be limited by transistor size and density. Because the semiconductor industry has pushed to create ever-smaller features…
Read MoreCost of ownership plays an important role in lithography process materials and methods decisions. Process simplifications brought about by layer-to-layer synergy drive significant cost of ownership advantages for multilayer lithography…
Read MoreOne of the most critical variables in spin-coating processes is coating uniformity. In many cases, engineers are challenged with achieving ultralow total thickness variation at high film thicknesses while conserving…
Read MoreAs semiconductor devices evolve, smaller and smaller feature sizes are required to achieve the performance desired by the consumer. Smaller features give rise to lower power consumption for mobile devices,…
Read MoreAt the Science Café event held at Farmers Gastropub on April 19, James E. (Jim) Lamb III, Brewer Science Corporate Technology Strategist and Director of the Printed Electronics Technology Center,…
Read MoreOver the past decade, Brewer Science has developed and published various methods of creating a planar surface over three-dimensional (3-D) structures. Sharing these results invariably leads to a potential customer…
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